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Issue 15, 2017
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The effect of Sb-surfactant on GaInP CuPtB type ordering: assessment through dark field TEM and aberration corrected HAADF imaging

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Abstract

We report on the effect of Sb on the microstructure of GaInP layers grown by metal organic vapor phase epitaxy (MOVPE). These layers exhibit a CuPtB single variant ordering due to the intentional misorientation of the substrate (Ge(001) substrates with 6° misorientation towards the nearest [111] axis). The use of Sb as a surfactant during the GaInP growth does not modify the type of ordering, but it is found that the order parameter (η) decreases with increasing Sb flux. Dark field microscopy reveals a variation of the angle of the antiphase boundaries (APBs) with Sb amount. The microstructure is assessed through high angle annular dark field (HAADF) experiments and image simulation revealing Z-contrast loss in APBs due to the superposition of ordered domains.

Graphical abstract: The effect of Sb-surfactant on GaInP CuPtB type ordering: assessment through dark field TEM and aberration corrected HAADF imaging

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Article information


Submitted
20 Feb 2017
Accepted
23 Mar 2017
First published
23 Mar 2017

Phys. Chem. Chem. Phys., 2017,19, 9806-9810
Article type
Paper

The effect of Sb-surfactant on GaInP CuPtB type ordering: assessment through dark field TEM and aberration corrected HAADF imaging

C. Coll, E. Barrigón, L. López-Conesa, J. Rebled, L. Barrutia, I. Rey-Stolle, S. Estradé, C. Algora and F. Peiró, Phys. Chem. Chem. Phys., 2017, 19, 9806
DOI: 10.1039/C7CP01125C

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