Issue 4, 2017

Focused electron beam based direct-write fabrication of graphene and amorphous carbon from oxo-functionalized graphene on silicon dioxide

Abstract

Controlled patterning of graphene is an important task towards device fabrication and thus is the focus of current research activities. Graphene oxide (GO) is a solution-processible precursor of graphene. It can be patterned by thermal processing. However, thermal processing of GO leads to decomposition and CO2 formation. Alternatively, focused electron beam induced processing (FEBIP) techniques can be used to pattern graphene with high spatial resolution. Based on this approach, we explore FEBIP of GO deposited on SiO2. Using oxo-functionalized graphene (oxo-G) with an in-plane lattice defect density of 1% we are able to image the electron beam-induced effects by scanning Raman microscopy for the first time. Depending on electron energy (2–30 keV) and doses (50–800 mC m−2) either reduction of GO or formation of permanent lattice defects occurs. This result reflects a step towards controlled FEBIP processing of oxo-G.

Graphical abstract: Focused electron beam based direct-write fabrication of graphene and amorphous carbon from oxo-functionalized graphene on silicon dioxide

Supplementary files

Article information

Article type
Communication
Submitted
25 Nov 2016
Accepted
21 Dec 2016
First published
21 Dec 2016
This article is Open Access
Creative Commons BY-NC license

Phys. Chem. Chem. Phys., 2017,19, 2683-2686

Focused electron beam based direct-write fabrication of graphene and amorphous carbon from oxo-functionalized graphene on silicon dioxide

S. Schindler, F. Vollnhals, C. E. Halbig, H. Marbach, H. Steinrück, C. Papp and S. Eigler, Phys. Chem. Chem. Phys., 2017, 19, 2683 DOI: 10.1039/C6CP08070G

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