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Issue 46, 2017
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Highly efficient exciplex organic light-emitting devices employing a sputtered indium-tin oxide electrode with nano-pinhole morphology

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Abstract

We propose a DC sputtering process to fabricate an indium-tin oxide (ITO) electrode with nano-pinhole morphology for an efficient exciplex organic light-emitting device (OLED). The ITO thin-film of 80 nm thickness sputtered at room temperature shows an optical transmittance of over 86.5% in the range of visible light and an electrical sheet resistance of 75 ohm sq−1. A layer of di-[4-(N,N-ditolyl-amino)-phenyl]cyclohexane (HATCN) is inserted into the device to improve the hole injection efficiency by reducing the injection barrier at the anode/di-[4-(N,N-ditolyl-amino)-phenyl]cyclohexane (TAPC) interface and simultaneously modifying the work function of sputtered ITO/HAT-CN to 5.5 eV, as characterized by photoelectron spectroscopy. The exciplex-forming phosphorescent OLEDs employing such sputtered ITO exhibit a maximum external quantum efficiency, power efficiency, and current efficiency of 34%, 132.8 lm W−1, and 127.6 cd A−1, respectively. In addition, the device shows Lambertian emission attributed to the sputtered ITO film with a special nano-pinhole morphology by enhancing the scattering effect inside the device and resulting in the improvement of the light extraction properties and device performance.

Graphical abstract: Highly efficient exciplex organic light-emitting devices employing a sputtered indium-tin oxide electrode with nano-pinhole morphology

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Supplementary files

Article information


Submitted
03 Aug 2017
Accepted
29 Oct 2017
First published
30 Oct 2017

J. Mater. Chem. C, 2017,5, 12050-12056
Article type
Paper

Highly efficient exciplex organic light-emitting devices employing a sputtered indium-tin oxide electrode with nano-pinhole morphology

C. Lee, C. Shih, G. Kumar, S. Biring, S. Sen and S. Liu, J. Mater. Chem. C, 2017, 5, 12050
DOI: 10.1039/C7TC03500D

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