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Issue 19, 2017
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Metal oxide semiconductor 3D printing: preparation of copper(ii) oxide by fused deposition modelling for multi-functional semiconducting applications

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Abstract

A CuO semiconductor was successfully prepared by fused deposition modeling (FDM) and sintering technique. A 1.75 mm high-loading Cu composite was extruded and printed into a desired size and shape. The sample was sintered and calcined to transform Cu powder to CuO semiconductor. The 3-dimensional (3D) printed CuO had a scaffold structure with a half density of bulk CuO. It had a mechanical characteristic like a scaffold ceramic although prepared by FDM machine. van der Pauw measurement and UV-visible absorption spectroscopy were used to determine the electrical and optical properties of the 3D printed CuO respectively. The 3D printed CuO was used as an example of a 3D semiconductor which has a response to light, pressure, and temperature. This technique has a potential to be applied in any FDM machine which might allow anyone to print semiconductor or other related materials.

Graphical abstract: Metal oxide semiconductor 3D printing: preparation of copper(ii) oxide by fused deposition modelling for multi-functional semiconducting applications

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Supplementary files

Article information


Submitted
07 Mar 2017
Accepted
24 Apr 2017
First published
24 Apr 2017

J. Mater. Chem. C, 2017,5, 4614-4620
Article type
Communication

Metal oxide semiconductor 3D printing: preparation of copper(II) oxide by fused deposition modelling for multi-functional semiconducting applications

A. Salea, R. Prathumwan, J. Junpha and K. Subannajui, J. Mater. Chem. C, 2017, 5, 4614
DOI: 10.1039/C7TC00990A

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