Issue 27, 2017, Issue in Progress
From the journal:

RSC Advances

Semiconducting properties of perchlorate-doped graphene using an electrochemical method†

Chang-Soo Park,a   Dongil Chu, ORCID logo a   Yoon Shonb  and  Eun Kyu Kim ORCID logo *a  

* Corresponding authors

a Department of Physics and Research Institute for Natural Science, Hanyang University, Seoul 133-791, Republic of Korea
E-mail: ek-kim@hanyang.ac.kr
Tel: +82 2 2220 4405

b Quantum Functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Republic of Korea

Abstract

We report a band gap opening and p-type doping for single layer graphene by an electrochemical method. The chlorine oxide doping to graphene was carried out in 0.1 M LiClO4/acetonitrile solution. The temperature dependent conductivity of the p-type doped graphene at an applied potential of 1.5 V during the electrochemical doping process showed the band gap of 0.094 eV.

Graphical abstract: Semiconducting properties of perchlorate-doped graphene using an electrochemical method

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Article information

DOI
https://doi.org/10.1039/C7RA00332C
Article type
Paper
Submitted
09 Jan 2017
Accepted
03 Mar 2017
First published
16 Mar 2017
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2017,7, 16823-16825

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Semiconducting properties of perchlorate-doped graphene using an electrochemical method

C. Park, D. Chu, Y. Shon and E. K. Kim, RSC Adv., 2017, 7, 16823 DOI: 10.1039/C7RA00332C

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