Issue 4, 2017

Direct transfer of graphene and application in low-voltage hybrid transistors


A novel scotch tape assisted direct transfer of graphene onto different flexible and rigid substrates, including paper, polyethylene terephthalate, flat and curved glass, SiO2/Si, and a solution-processed high-k dielectric layer is presented. This facile graphene transfer process is driven by the difference in adhesion energy of graphene with respect to tape and a target substrate. In addition, the graphene films transferred by scotch tape are found to be cleaner, more continuous, less doped and higher-quality than those transferred by PMMA. Based on that, the tape transferred graphene is employed as a carrier transport layer in oxide thin-film transistors (TFTs) with different gate dielectrics (i.e., SiO2 and high-k ZrO2). The In2O3/graphene/SiO2 TFTs exhibit a high electron mobility of 404 cm2 V−1 s−1 and a high on/off current ratio of 105, while the counterpart In2O3/graphene/ZrO2 TFTs exhibit improved electron transport properties at an ultra-low operating voltage of 3 V, which is 20 times lower than that of SiO2-based devices. In contrast, the ZrO2-based TFTs with PMMA-transferred graphene exhibit no detective electrical properties. Therefore, the proposed scotch tape assisted transfer method will be particularly useful for the production of graphene films and other two-dimensional materials in more cost-effective and environmentally friendly modes for broad practical applications beyond graphene-based field-effect transistors (GFETs).

Graphical abstract: Direct transfer of graphene and application in low-voltage hybrid transistors

Supplementary files

Article information

Article type
07 Nov 2016
16 Dec 2016
First published
12 Jan 2017
This article is Open Access
Creative Commons BY license

RSC Adv., 2017,7, 2172-2179

Direct transfer of graphene and application in low-voltage hybrid transistors

H. Zhu, A. Liu, F. Shan, W. Yang, C. Barrow and J. Liu, RSC Adv., 2017, 7, 2172 DOI: 10.1039/C6RA26452B

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