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Issue 43, 2017
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Correction: Wafer-scale reliable switching memory based on 2-dimensional layered organic–inorganic halide perovskite

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Abstract

Correction for ‘Wafer-scale reliable switching memory based on 2-dimensional layered organic–inorganic halide perovskite’ by Ja-Young Seo, et al., Nanoscale, 2017, DOI: 10.1039/c7nr05582j.

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Publication details

The article was received on 18 Oct 2017, accepted on 18 Oct 2017 and first published on 27 Oct 2017


Article type: Correction
DOI: 10.1039/C7NR90229H
Nanoscale, 2017,9, 17144-17144
  • Open access: Creative Commons BY license
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    Correction: Wafer-scale reliable switching memory based on 2-dimensional layered organic–inorganic halide perovskite

    J. Seo, J. Choi, H. Kim, J. Kim, J. Yang, C. Cuhadar, J. S. Han, S. Kim, D. Lee, H. W. Jang and N. Park, Nanoscale, 2017, 9, 17144
    DOI: 10.1039/C7NR90229H

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