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Issue 7, 2017
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A graphene barristor using nitrogen profile controlled ZnO Schottky contacts

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Abstract

We have successfully demonstrated a graphene–ZnO:N Schottky barristor. The barrier height between graphene and ZnO:N could be modulated by a buried gate electrode in the range of 0.5–0.73 eV, and an on–off ratio of up to 107 was achieved. By using a nitrogen-doped ZnO film as a Schottky contact material, the stability problem of previously reported graphene barristors could be greatly alleviated and a facile route to build a top-down processed graphene barristor was realized with a very low heat cycle. This device will be instrumental when implementing logic functions in systems requiring high-performance logic devices fabricated with a low temperature fabrication process such as back-end integrated logic devices or flexible devices on soft substrates.

Graphical abstract: A graphene barristor using nitrogen profile controlled ZnO Schottky contacts

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Publication details

The article was received on 11 Nov 2016, accepted on 23 Jan 2017 and first published on 26 Jan 2017


Article type: Communication
DOI: 10.1039/C6NR08829E
Nanoscale, 2017,9, 2442-2448

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    A graphene barristor using nitrogen profile controlled ZnO Schottky contacts

    H. J. Hwang, K. E. Chang, W. B. Yoo, C. H. Shim, S. K. Lee, J. H. Yang, S. Kim, Y. Lee, C. Cho and B. H. Lee, Nanoscale, 2017, 9, 2442
    DOI: 10.1039/C6NR08829E

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