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Issue 21, 2017
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Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films

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Abstract

Flexible and transparent resistive switching memories are highly desired for the construction of portable and even wearable electronics. Upon optimization of the microstructure wherein an amorphous-nanocrystalline hafnium oxide thin film is fabricated, an all-oxide based transparent RRAM device with stable resistive switching behavior that can withstand a mechanical tensile stress of up to 2.12% is obtained. It is demonstrated that the superior electrical, thermal and mechanical performance of the ITO/HfOx/ITO device can be ascribed to the formation of pseudo-straight metallic hafnium conductive filaments in the switching layer, and is only limited by the choice of electrode materials. When the ITO bottom electrode is replaced with platinum metal, the mechanical failure threshold of the device can be further extended.

Graphical abstract: Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films

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Supplementary files

Article information


Submitted
07 Nov 2016
Accepted
08 Feb 2017
First published
02 Mar 2017

Nanoscale, 2017,9, 7037-7046
Article type
Paper

Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films

J. Shang, W. Xue, Z. Ji, G. Liu, X. Niu, X. Yi, L. Pan, Q. Zhan, X. Xu and R. Li, Nanoscale, 2017, 9, 7037
DOI: 10.1039/C6NR08687J

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