Jump to main content
Jump to site search
PLANNED MAINTENANCE Close the message box

Scheduled maintenance work on Wednesday 22nd May 2019 from 11:00 AM to 1:00 PM (GMT).

During this time our website performance may be temporarily affected. We apologise for any inconvenience this might cause and thank you for your patience.


Issue 1, 2017
Previous Article Next Article

High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions

Author affiliations

Abstract

Electrical and optical properties of lateral monolayer WSe2–MoS2 p–n heterojunctions were characterized to demonstrate a high responsivity of 0.26 A W−1 with an excellent omnidirectional photodetection capability. The heterojunction functioning as a diode exhibits a prominent gate-tuning behavior with an ideality factor of 1.25. In addition, ultrafast photoresponse, low-light detectability, and high-temperature operation have been achieved. These unique characteristics pave a way for the future development of sub-nano semiconductor devices.

Graphical abstract: High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions

Back to tab navigation

Supplementary files

Publication details

The article was received on 26 Apr 2016, accepted on 12 Oct 2016 and first published on 28 Oct 2016


Article type: Communication
DOI: 10.1039/C6NH00075D
Nanoscale Horiz., 2017,2, 37-42

  •   Request permissions

    High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions

    M. Tsai, M. Li, Y. Shi, L. Chen, L. Li and J. He, Nanoscale Horiz., 2017, 2, 37
    DOI: 10.1039/C6NH00075D

Search articles by author

Spotlight

Advertisements