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Volume 201, 2017

Designing porous electronic thin-film devices: band offsets and heteroepitaxy

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Abstract

Increasing numbers of electrically active porous framework materials are being reported, with conductivities that make them attractive for technological applications. As design strategies for efficient carrier transport emerge, the next challenge is to incorporate the materials into a functioning device. In thin-film devices interface effects are of critical importance to overall function. In this article we present a method to identify compatible materials combinations to achieve mechanically robust, electronically optimal pairings. The computational screening is based on a two-step procedure: (i) matching of lattice constants to ensure interfaces with minimal epitaxial strain and therefore maximal mechanical and chemical stability; (ii) matching of absolute electron energies to construct energy-band-alignment diagrams, which can be used to screen for particular electronic applications. We apply the methodology to search for zeolitic imidazolate framework (ZIF) type materials that are compatible with native metal electrodes. The procedure allows us to predict simple routes for electrochemical deposition of ZIFs for application as conductive porous electrodes.

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Article information


Submitted
16 Jan 2017
Accepted
17 Feb 2017
First published
16 Jun 2017

This article is Open Access

Faraday Discuss., 2017,201, 207-219
Article type
Paper

Designing porous electronic thin-film devices: band offsets and heteroepitaxy

K. T. Butler, C. H. Hendon and A. Walsh, Faraday Discuss., 2017, 201, 207 DOI: 10.1039/C7FD00019G

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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