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Issue 11, 2017
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Additive engineering for high-performance room-temperature-processed perovskite absorbers with micron-size grains and microsecond-range carrier lifetimes

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Abstract

Perovskite photovoltaics have attracted remarkable attention recently due to their exceptional power conversion efficiencies (PCE). State-of-the-art perovskite absorbers typically require thermal annealing steps for high film quality. However, the annealing process adds cost and reduces yield for device fabrication and may also hinder application in tandem photovoltaics and flexible/ultra-low-cost optoelectronics. Herein, we report an additive-based room-temperature process for realizing high-quality methylammonium lead iodide films with micron-sized grains (>2 μm) and microsecond-range carrier lifetimes (τ1 = 931.94 ± 89.43 ns; τ2 = 320.41 ± 43.69 ns). Solar cells employing such films demonstrate 18.22% PCE with improved current–voltage hysteresis and stability without encapsulation. Further, we reveal that room-temperature-processed perovskite film grain size strongly depends on the precursor aggregate size in the film-deposition solution and that additive-based tuning of aggregate properties enables enlarging grains to the micron scale. These results offer a new pathway for more versatile, cost-effective perovskite processing.

Graphical abstract: Additive engineering for high-performance room-temperature-processed perovskite absorbers with micron-size grains and microsecond-range carrier lifetimes

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Supplementary files

Article information


Submitted
10 Aug 2017
Accepted
13 Oct 2017
First published
13 Oct 2017

Energy Environ. Sci., 2017,10, 2365-2371
Article type
Paper

Additive engineering for high-performance room-temperature-processed perovskite absorbers with micron-size grains and microsecond-range carrier lifetimes

Q. Han, Y. Bai, J. Liu, K. Du, T. Li, D. Ji, Y. Zhou, C. Cao, D. Shin, J. Ding, A. D. Franklin, J. T. Glass, J. Hu, M. J. Therien, J. Liu and D. B. Mitzi, Energy Environ. Sci., 2017, 10, 2365
DOI: 10.1039/C7EE02272G

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