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Issue 5, 2017
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Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition

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Abstract

Owing to their prominent stability and CMOS compatibility, HfO2-based ferroelectric films have attracted great attention as promising candidates for ferroelectric random-access memory applications. A major reliability issue for HfO2 based ferroelectric devices is fatigue. So far, there have been a few studies on the fatigue mechanism of this material. Here, we report a systematic study of the fatigue mechanism of yttrium-doped hafnium oxide (HYO) ferroelectric thin films deposited by pulsed laser deposition. The influence of pulse width, pulse amplitude and temperature on the fatigue behavior of HYO during field cycling is studied. The temperature dependent conduction mechanism is characterized after different fatigue cycles. Domain wall pinning caused by carrier injection at shallow defect centers is found to be the major fatigue mechanism of this material. The fatigued device can fully recover to the fatigue-free state after being heated at 90 °C for 30 min, confirming the shallow trap characteristic of the domain wall pinning defects.

Graphical abstract: Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition

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Publication details

The article was received on 02 Nov 2016, accepted on 23 Nov 2016 and first published on 23 Nov 2016


Article type: Paper
DOI: 10.1039/C6CP07501K
Phys. Chem. Chem. Phys., 2017,19, 3486-3497

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    Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition

    F. Huang, X. Chen, X. Liang, J. Qin, Y. Zhang, T. Huang, Z. Wang, B. Peng, P. Zhou, H. Lu, L. Zhang, L. Deng, M. Liu, Q. Liu, H. Tian and L. Bi, Phys. Chem. Chem. Phys., 2017, 19, 3486
    DOI: 10.1039/C6CP07501K

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