Issue 39, 2016

Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity

Abstract

Solar-blind photodetectors have received a great deal of interest owing to their high selectivity for deep ultra-violet light in the presence of visible light. The development of alternative materials and innovative device designs are necessary for such solar-blind photodetectors, as the currently available commercial devices have issues pertaining to chemical and thermal instability, cost, and material handling due to their rigidity. Here, we fabricated solar-blind photodetectors based on exfoliated quasi-two-dimensional β-Ga2O3 flakes with optimal opto-electrical properties (direct bandgap of ∼4.9 eV), chemical and thermal stability, and then systematically characterized their photoresponsive properties. The fabricated device structures were based on back-gated field-effect transistors, allowing us to control the dark currents. These photodetectors exhibit extraordinary photoresponsive properties including the highest responsivity (1.8 × 105 A W−1) among reported semiconductor thin-film solar-blind photodetectors.

Graphical abstract: Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity

Supplementary files

Article information

Article type
Paper
Submitted
15 Jun 2016
Accepted
12 Sep 2016
First published
12 Sep 2016

J. Mater. Chem. C, 2016,4, 9245-9250

Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity

S. Oh, J. Kim, F. Ren, S. J. Pearton and J. Kim, J. Mater. Chem. C, 2016, 4, 9245 DOI: 10.1039/C6TC02467J

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