High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

Yu Wang; Takio Kizu; Lei Song; Yujia Zhang; Sai Jiang; Jun Qian; Qijing Wang; Yi Shi; Youdou Zheng; Toshihide Nabatame; Kazuhito Tsukagoshi; Yun Li

doi:10.1039/C6TC01768A

High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer†

Yu Wang,‡^a Takio Kizu,‡^b Lei Song,‡^a Yujia Zhang,^a Sai Jiang,^a Jun Qian,^a Qijing Wang,^a Yi Shi,^a Youdou Zheng,^a Toshihide Nabatame,^c Kazuhito Tsukagoshi*^b and Yun Li*^a

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* Corresponding authors

^a National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
E-mail: yli@nju.edu.cn, yshi@nju.edu.cn

^b International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp

^c MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

Abstract

Ferroelectric field-effect transistors (Fe-FETs) are of great interest for a variety of non-volatile memory device applications. High-performance top-gate Fe-FET memories using ferroelectric polymers of poly(vinylidene fluoride–trifluoroethylene) (P(VDF–TrFE)) and the inorganic oxide of InSiO were fabricated. The extracted electron mobility was as high as 84.1 cm² V⁻¹ s⁻¹ in a low-frequency state. The interfacial charge transfer between the P(VDF–TrFE) and InSiO during annealing of the P(VDF–TrFE) layer benefits improvement in the device performance. The results show the potential of our Fe-FET memories for next-generation electronics.

Journal of Materials Chemistry C

High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer†

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High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

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