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Issue 34, 2016
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High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

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Abstract

Ferroelectric field-effect transistors (Fe-FETs) are of great interest for a variety of non-volatile memory device applications. High-performance top-gate Fe-FET memories using ferroelectric polymers of poly(vinylidene fluoride–trifluoroethylene) (P(VDF–TrFE)) and the inorganic oxide of InSiO were fabricated. The extracted electron mobility was as high as 84.1 cm2 V−1 s−1 in a low-frequency state. The interfacial charge transfer between the P(VDF–TrFE) and InSiO during annealing of the P(VDF–TrFE) layer benefits improvement in the device performance. The results show the potential of our Fe-FET memories for next-generation electronics.

Graphical abstract: High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

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Supplementary files

Article information


Submitted
01 May 2016
Accepted
11 Jul 2016
First published
12 Jul 2016

This article is Open Access

J. Mater. Chem. C, 2016,4, 7917-7923
Article type
Paper

High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

Y. Wang, T. Kizu, L. Song, Y. Zhang, S. Jiang, J. Qian, Q. Wang, Y. Shi, Y. Zheng, T. Nabatame, K. Tsukagoshi and Y. Li, J. Mater. Chem. C, 2016, 4, 7917
DOI: 10.1039/C6TC01768A

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