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Issue 29, 2016
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Unified film patterning and annealing of an organic semiconductor with micro-grooved wet stamps

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Abstract

A unified patterning and annealing approach was successfully demonstrated for 5,11-bis(triethylsilylethynyl)-anthradithiophene (TES-ADT) films spun-cast on polymer-treated SiO2 dielectrics. First, rubbery polydimethylsiloxane (μ-PDMS) stamps with microscale periodic grooves were swollen in 1,2-dichloroethane and then softly placed onto amorphous-like TES-ADT films. In this case, the film sides physically in contact with the wet stamps were quickly absorbed into the PDMS matrix while the non-contact area formed highly-ordered phases by the solvent-annealing effect. The resulting patterns of TES-ADT contained discernable crystallites, where the grain sizes drastically decreased and their shapes transformed from spherulites to optically featureless ones with a decreasing line width from 100 to 2.5 μm. Unlike ordinary systems containing spherulitic domains, the 2.5 μm line-confined TES-ADT patterns contained layer-stacked crystallites but an optically invisible grain boundary, yielding an unexpectedly high field-effect mobility of 2.60 cm2 V−1 s−1 in organic field-effect transistors (OFETs), with narrow deviations less than 8% (averaged from 42 devices). The results suggest that the well π-overlapped grains and their smooth connections are key factors to achieve high performance multi-array OFET applications.

Graphical abstract: Unified film patterning and annealing of an organic semiconductor with micro-grooved wet stamps

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Supplementary files

Article information


Submitted
27 Apr 2016
Accepted
22 Jun 2016
First published
23 Jun 2016

J. Mater. Chem. C, 2016,4, 6996-7003
Article type
Paper

Unified film patterning and annealing of an organic semiconductor with micro-grooved wet stamps

K. Kim, M. Jang, M. Lee, T. K. An, J. E. Anthony, S. H. Kim, H. Yang and C. E. Park, J. Mater. Chem. C, 2016, 4, 6996
DOI: 10.1039/C6TC01723A

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