Issue 44, 2016

Evidence of band bending induced by hole trapping at MAPbI3 perovskite/metal interface

Abstract

Electron injection by tunneling from a gold electrode and hole transport properties in polycrystalline MAPbI3 has been investigated using variable temperature experiments and numerical simulations. The presence of a large and unexpected band bending at the Au/MAPbI3 interface is revealed and attributed to the trapping of holes, which enhances the injection of electrons via tunneling. These results elucidate the role of volume and interface defects in state-of-the-art hybrid perovskite semiconductors.

Graphical abstract: Evidence of band bending induced by hole trapping at MAPbI3 perovskite/metal interface

Supplementary files

Article information

Article type
Paper
Submitted
16 Oct 2016
Accepted
21 Oct 2016
First published
26 Oct 2016

J. Mater. Chem. A, 2016,4, 17529-17536

Evidence of band bending induced by hole trapping at MAPbI3 perovskite/metal interface

Y.-F. Chen, Y.-T. Tsai, D. M. Bassani, R. Clerc, D. Forgács, H. J. Bolink, M. Wussler, W. Jaegermann, G. Wantz and L. Hirsch, J. Mater. Chem. A, 2016, 4, 17529 DOI: 10.1039/C6TA08979H

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