Issue 1, 2016

A NIR dye with high-performance n-type semiconducting properties

Abstract

A novel hetero-polycyclic aromatic compound manifesting strong near-infrared (NIR) absorption as well as high-performance n-type semiconducting properties is developed. With an exceptionally low LUMO level at −4.7 eV, this NIR dye (λmax ≈ 1100 nm, ε ≈ 105 mol−1 L cm−1) exhibits adequate stability under ambient conditions, with electron mobility up to 0.96 cm2 V−1 s−1 measured in solution-processed organic field-effect transistors. A special metal-free C–C coupling serves as a pivotal step in constructing the polycyclic π-framework of this low-bandgap chromophore, by fusing an electron-deficient naphthalenediimide moiety with an electron-donating naphthalenediamine. Such a rare combination of extraordinary optical and semiconductive attributes is quite valuable for organic small molecules, and promising for unique applications in the opto-electronic field.

Graphical abstract: A NIR dye with high-performance n-type semiconducting properties

Supplementary files

Article information

Article type
Edge Article
Submitted
17 Aug 2015
Accepted
05 Oct 2015
First published
06 Oct 2015
This article is Open Access

All publication charges for this article have been paid for by the Royal Society of Chemistry
Creative Commons BY-NC license

Chem. Sci., 2016,7, 499-504

Author version available

A NIR dye with high-performance n-type semiconducting properties

J. Xie, K. Shi, K. Cai, D. Zhang, J. Wang, J. Pei and D. Zhao, Chem. Sci., 2016, 7, 499 DOI: 10.1039/C5SC03045E

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