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Issue 66, 2016, Issue in Progress
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Roles of oxygen and nitrogen in control of nonlinear resistive behaviors via filamentary and homogeneous switching in an oxynitride thin film memristor

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Abstract

A TiOxNy thin film, which contains controllable concentrations of oxygen and nitrogen by a single-step reactive sputtering process using a non-symmetric Pt electrode as top electrode and TiN as bottom electrode, exhibiting non-linear IV behavior, was proposed and demonstrated. A switching model of the non-linear IV switching was built based on diffusion of oxygen vacancies in the TiOxNy film with different ratios of O and N after the SET process. Effects on the switching relationship between TiOxNy and electrodes were investigated to optimize the best conditions for the non-linear behavior. The origin of the nonlinear property was investigated in detail by changing the compositions of oxygen and nitrogen in the TiOxNy thin film. We believe that these findings would open up opportunities to exploit resistive switching mechanisms and simple memristor stacking in next generation crossbar array applications.

Graphical abstract: Roles of oxygen and nitrogen in control of nonlinear resistive behaviors via filamentary and homogeneous switching in an oxynitride thin film memristor

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Publication details

The article was received on 12 May 2016, accepted on 30 May 2016 and first published on 03 Jun 2016


Article type: Paper
DOI: 10.1039/C6RA12408A
RSC Adv., 2016,6, 61221-61227

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    Roles of oxygen and nitrogen in control of nonlinear resistive behaviors via filamentary and homogeneous switching in an oxynitride thin film memristor

    Y. Shih, T. Wang, J. Huang, C. Lai, Y. Hong and Y. Chueh, RSC Adv., 2016, 6, 61221
    DOI: 10.1039/C6RA12408A

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