Jump to main content
Jump to site search

Issue 47, 2016
Previous Article Next Article

Tailored electric and optical properties of Nd doped ZnO: from transparent conducting oxide to photon down-shifting thin films

Author affiliations

Abstract

Nd-doped ZnO films with highly tunable properties were grown by pulsed electron beam deposition at 500 °C on Si and c-cut single crystal substrates under oxygen gas. The effects of a slight change in the oxygen pressure (10−2 to 2 × 10−2 mbar) on the composition, structure and physical properties of the films were studied. Films grown at 10−2 mbar present a low resistivity (5 × 10−3 Ω cm) and high transparency in visible range and do not show any near-infrared emission due to Nd3+ ions. On the contrary, films grown at 2 × 10−2 mbar have high resistivity (>16 Ω cm), high optical transparency and near infrared emission of the Nd3+ ions is observed under indirect excitation at 335 nm (i.e. absorption by the ZnO matrix and transfer to Nd3+ ions). These significant changes in physical properties, leading from transparent conducting oxide to photon down-shifting thin films, are related to growth mode in pulsed-electron beam deposition.

Graphical abstract: Tailored electric and optical properties of Nd doped ZnO: from transparent conducting oxide to photon down-shifting thin films

Back to tab navigation

Publication details

The article was received on 23 Mar 2016, accepted on 18 Apr 2016 and first published on 20 Apr 2016


Article type: Paper
DOI: 10.1039/C6RA07669F
Author version
available:
Download author version (PDF)
RSC Adv., 2016,6, 41465-41472

  •   Request permissions

    Tailored electric and optical properties of Nd doped ZnO: from transparent conducting oxide to photon down-shifting thin films

    M. Nistor, L. Mihut, E. Millon, C. Cachoncinlle, C. Hebert and J. Perrière, RSC Adv., 2016, 6, 41465
    DOI: 10.1039/C6RA07669F

Search articles by author

Spotlight

Advertisements