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Issue 47, 2016
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Tailored electric and optical properties of Nd doped ZnO: from transparent conducting oxide to photon down-shifting thin films

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Abstract

Nd-doped ZnO films with highly tunable properties were grown by pulsed electron beam deposition at 500 °C on Si and c-cut single crystal substrates under oxygen gas. The effects of a slight change in the oxygen pressure (10−2 to 2 × 10−2 mbar) on the composition, structure and physical properties of the films were studied. Films grown at 10−2 mbar present a low resistivity (5 × 10−3 Ω cm) and high transparency in visible range and do not show any near-infrared emission due to Nd3+ ions. On the contrary, films grown at 2 × 10−2 mbar have high resistivity (>16 Ω cm), high optical transparency and near infrared emission of the Nd3+ ions is observed under indirect excitation at 335 nm (i.e. absorption by the ZnO matrix and transfer to Nd3+ ions). These significant changes in physical properties, leading from transparent conducting oxide to photon down-shifting thin films, are related to growth mode in pulsed-electron beam deposition.

Graphical abstract: Tailored electric and optical properties of Nd doped ZnO: from transparent conducting oxide to photon down-shifting thin films

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Article information


Submitted
23 Mar 2016
Accepted
18 Apr 2016
First published
20 Apr 2016

RSC Adv., 2016,6, 41465-41472
Article type
Paper
Author version available

Tailored electric and optical properties of Nd doped ZnO: from transparent conducting oxide to photon down-shifting thin films

M. Nistor, L. Mihut, E. Millon, C. Cachoncinlle, C. Hebert and J. Perrière, RSC Adv., 2016, 6, 41465
DOI: 10.1039/C6RA07669F

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