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Issue 47, 2016
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Preparation of Sn-doped CuAlS2 films with an intermediate band and wide-spectrum solar response†

Chenguang Guo,a   Chongyin Yang,a   Yian Xie,a   Ping Chen,a   Mingsheng Qin,a   Rongtie Huangc  and  Fuqiang Huang*ab  
Author affiliations

* Corresponding authors

a CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P. R. China
E-mail: huangfq@mail.sic.ac.cn

b State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China

c Department of Physics, Shanghai University, Shanghai 200444, P. R. China

Abstract

As a member of Cu-containing chalcopyrites, CuAlS2 is a promising candidate material for intermediate band solar cells (IBSCs). In this paper, the intermediate band mechanism of Sn doped CuAlS2 was investigated both theoretically and experimentally, and the two sub-bandgaps were measured to be 1.91 eV and 1.31 eV, respectively. A novel and convenient method of Electrophoretic Deposition (EPD) was utilized to prepare Sn doped CuAlS2 films. Due to the wide-spectrum of absorption introduced by the intermediate band, Sn doped CuAlS2 films showed better photoelectrochemical performance (PEC).

Graphical abstract: Preparation of Sn-doped CuAlS2 films with an intermediate band and wide-spectrum solar response

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Supplementary files

Article information

https://doi.org/10.1039/C6RA00946H
Submitted
12 Jan 2016
Accepted
08 Apr 2016
First published
19 Apr 2016
RSC Adv., 2016,6, 40806-40810
Article type
Paper
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Preparation of Sn-doped CuAlS2 films with an intermediate band and wide-spectrum solar response

C. Guo, C. Yang, Y. Xie, P. Chen, M. Qin, R. Huang and F. Huang, RSC Adv., 2016, 6, 40806
DOI: 10.1039/C6RA00946H

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