Jump to main content
Jump to site search
Access to RSC content Close the message box

Continue to access RSC content when you are not at your institution. Follow our step-by-step guide.


Issue 7, 2016
Previous Article Next Article

Critical role of silk fibroin secondary structure on the dielectric performances of organic thin-film transistors

Author affiliations

Abstract

Silk fibroin (SF) is being considered as an emerging class of dielectric material in electronics, such as organic thin-film transistors (OTFTs). SF has several advantageous properties, including high transparency, flexibility, and solution-processibility. In this study, we investigated the effects of processing solvent and post-treatment on the surface properties and structural development of SF films, which were used in the gate-dielectric of OTFTs. The SF films cast from aqueous solution exhibited an amorphous structure with random coil conformations, leading to poor dielectric properties that were inadequate for developing OTFTs. In contrast, the use of formic acid solution and sequential methanol vapor treatment after film casting induced a smoother SF surface. Moreover, its crystallinity also improved dramatically. Furthermore, the SF films cast from formic acid solution and treated with methanol vapor were capable of growth of highly ordered organic semiconductor thin films deposited on these films. As a result, pentacene TFTs fabricated with the SF films showed high performance and stable operation with nearly zero turn-on voltage, negligible hysteresis, and high bias stability. This indicates a strong correlation between the structure of the SF film and dielectric performances of OTFTs. We believe that our study would be useful in designing silk materials, which are highly compatible with the human interface and other biological environments.

Graphical abstract: Critical role of silk fibroin secondary structure on the dielectric performances of organic thin-film transistors

Back to tab navigation

Supplementary files

Article information


Submitted
08 Oct 2015
Accepted
05 Jan 2016
First published
08 Jan 2016

RSC Adv., 2016,6, 5907-5914
Article type
Paper
Author version available

Critical role of silk fibroin secondary structure on the dielectric performances of organic thin-film transistors

M. H. Park, J. Kim, S. C. Lee, S. Y. Cho, N. R. Kim, B. Kang, E. Song, K. Cho, H. Jin and W. H. Lee, RSC Adv., 2016, 6, 5907
DOI: 10.1039/C5RA20826B

Social activity

Search articles by author

Spotlight

Advertisements