Perfect rectifying behavior induced by AA-P2 dopants in armchair silicene nanoribbon devices
The band structures and electronic transport properties of AA-P2-doped armchair silicene nanoribbons (ASiNRs), with two phosphorus atoms substituting two adjacent silicon atoms in the same sublattice A, were investigated by applying density-functional theory in combination with the non-equilibrium Green’s function method. The results proved that the adjustment of the location of AA-P2 dopants in 7-ASiNRs gives rise to semiconducting and metallic characteristics of systems. The low-bias negative differential resistance behaviors appeared to be symmetrical in AA-P2-doped ASiNR devices. However, the symmetry of negative differential resistance behaviors gradually declined with doping AA-P2 from the center to the edge of the nanoribbons. In addition, a striking rectifying behavior can be found. These outstanding properties indicate the potential application of SiNRs in nanodevices.