A novel porphyrin-containing polyimide for memory devices

Abstract

We design a novel solution-processable polyimide ZnPor-t-DSDA with porphyrin moiety (electron donor) and sulfone-containing phthalimide (electron acceptor) for polymer memory applications. The resulting memory device can be switched from low-conductivity (OFF) to high-conductivity (ON) by both positive and negative sweeps, exhibiting symmetry biswitching characteristic with a short retention time (30 s). On the basis of the simulation calculation, the coplanar structure between donor and acceptor units results in charge transferring easily back to its original state after being excited by an electric field.