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Issue 34, 2016
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Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications

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Abstract

We report on the current-carrying capacity of the nanowires made from the quasi-1D van der Waals metal tantalum triselenide capped with quasi-2D boron nitride. The chemical vapor transport method followed by chemical and mechanical exfoliation were used to fabricate the mm-long TaSe3 wires with the lateral dimensions in the 20 to 70 nm range. Electrical measurements establish that the TaSe3/h-BN nanowire heterostructures have a breakdown current density exceeding 10 MA cm−2—an order-of-magnitude higher than that for copper. Some devices exhibited an intriguing step-like breakdown, which can be explained by the atomic thread bundle structure of the nanowires. The quasi-1D single crystal nature of TaSe3 results in a low surface roughness and in the absence of the grain boundaries. These features can potentially enable the downscaling of the nanowires to lateral dimensions in a few-nm range. Our results suggest that quasi-1D van der Waals metals have potential for applications in the ultimately downscaled local interconnects.

Graphical abstract: Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications

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Publication details

The article was received on 28 Apr 2016, accepted on 09 Aug 2016 and first published on 09 Aug 2016


Article type: Paper
DOI: 10.1039/C6NR03469A
Nanoscale, 2016,8, 15774-15782

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    Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications

    M. A. Stolyarov, G. Liu, M. A. Bloodgood, E. Aytan, C. Jiang, R. Samnakay, T. T. Salguero, D. L. Nika, S. L. Rumyantsev, M. S. Shur, K. N. Bozhilov and A. A. Balandin, Nanoscale, 2016, 8, 15774
    DOI: 10.1039/C6NR03469A

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