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Issue 31, 2016
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Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles

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Abstract

The switching operation of a Cu/MoOx/TiN resistive random access memory (ReRAM) device was investigated using in situ transmission electron microscopy (TEM), where the TiN surface was slightly oxidized (ox-TiN). The relationship between the switching properties and the dynamics of the ReRAM microstructure was confirmed experimentally. The growth and/or shrinkage of the conductive filament (CF) can be classified into two set modes and two reset modes. These switching modes depend on the device's switching history, factors such as the amount of Cu inclusions in the MoOx layer and the CF geometry. High currents are needed to produce an observable change in the CF. However, sharp and stable switching behaviour can be achieved without requiring such a major change. The local region around the CF is thought to contribute to the ReRAM switching process.

Graphical abstract: Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles

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Supplementary files

Article information


Submitted
29 Mar 2016
Accepted
14 Jul 2016
First published
15 Jul 2016

Nanoscale, 2016,8, 14754-14766
Article type
Paper

Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles

M. Arita, Y. Ohno, Y. Murakami, K. Takamizawa, A. Tsurumaki-Fukuchi and Y. Takahashi, Nanoscale, 2016, 8, 14754
DOI: 10.1039/C6NR02602H

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