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Issue 20, 2016
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Polarity-tunable spin transport in all-oxide multiferroic tunnel junctions

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Abstract

A multiferroic tunnel junction (MFTJ) promisingly offers multinary memory states in response to electric- and magnetic-fields, referring to tunneling electroresistance (TER) and tunneling magnetoresistance (TMR), respectively. In spite of recent progress, a substantial number of questions concerning the understanding of these two intertwined phenomena still remain open, e.g. the role of microstructural/chemical asymmetry at the interfaces of the junction and the effect of an electrode material on the MFTJ properties. In this regard, we look into the multiferroic effect of all-complex-oxide MFTJ (La0.7Sr0.3MnO3/Pb(Zr0.3Ti0.7)O3/La0.7Sr0.3MnO3). The results reveal apparent TER-TMR interplay—captured by the reversible electric-field control of the TMR effect. Finally, microscopy analysis on the MFTJ revealed that the observed TER-TMR interplay is perhaps mediated by microstructural and chemical asymmetry in our nominally symmetric MFTJ.

Graphical abstract: Polarity-tunable spin transport in all-oxide multiferroic tunnel junctions

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Supplementary files

Article information


Submitted
14 Feb 2016
Accepted
26 Apr 2016
First published
26 Apr 2016

Nanoscale, 2016,8, 10799-10805
Article type
Paper

Polarity-tunable spin transport in all-oxide multiferroic tunnel junctions

R. Soni, A. Petraru, H. S. Nair, O. Vavra, M. Ziegler, S. K. Kim, D. S. Jeong and H. Kohlstedt, Nanoscale, 2016, 8, 10799
DOI: 10.1039/C6NR01277A

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