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Issue 14, 2016
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Ultrafast triggered transient energy storage by atomic layer deposition into porous silicon for integrated transient electronics

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Abstract

Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g−1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics.

Graphical abstract: Ultrafast triggered transient energy storage by atomic layer deposition into porous silicon for integrated transient electronics

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Publication details

The article was received on 21 Dec 2015, accepted on 08 Mar 2016 and first published on 09 Mar 2016


Article type: Communication
DOI: 10.1039/C5NR09095D
Nanoscale, 2016,8, 7384-7390
  • Open access: Creative Commons BY license
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    Ultrafast triggered transient energy storage by atomic layer deposition into porous silicon for integrated transient electronics

    A. Douglas, N. Muralidharan, R. Carter, K. Share and C. L. Pint, Nanoscale, 2016, 8, 7384
    DOI: 10.1039/C5NR09095D

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