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Issue 9, 2016
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Ultraviolet/visible photodetectors with ultrafast, high photosensitivity based on 1D ZnS/CdS heterostructures†

Zheng Lou,a   Ludong Lia  and  Guozhen Shen*a  
Author affiliations

* Corresponding authors

a State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
E-mail: gzshen@semi.ac.cn

Abstract

One-dimensional (1D) semiconducting heterostructures have been widely studied for optoelectronics applications because of their unique geometry and attractive physical properties. In this study, we successfully synthesized 1D ZnS/CdS heterostructures, which can be used to fabricate high performance ultraviolet/visible photodetectors. Due to the separation of photo-generated electron–hole pairs, the resultant photodetector showed excellent photoresponse properties, including ultrahigh Ion/Ioff ratios (up to 105) and specific detectivity (2.23 × 1014 Jones), relatively fast response speed (5 ms), good stability and reproducibility. Moreover, the as-fabricated flexible photodetectors showed great mechanical stability under different bending conditions. Our results revealed the possibility of 1D ZnS/CdS heterostructures for application in the detection of UV and visible light. The main advantages of the heterostructures have great potential application for future optoelectronic devices.

Graphical abstract: Ultraviolet/visible photodetectors with ultrafast, high photosensitivity based on 1D ZnS/CdS heterostructures

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Supplementary files

Article information

Submitted
11 Dec 2015
Accepted
05 Feb 2016
First published
08 Feb 2016
Nanoscale, 2016,8, 5219-5225
Article type
Paper
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Ultraviolet/visible photodetectors with ultrafast, high photosensitivity based on 1D ZnS/CdS heterostructures

Z. Lou, L. Li and G. Shen, Nanoscale, 2016, 8, 5219
DOI: 10.1039/C5NR08792A

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