Jump to main content
Jump to site search

Issue 29, 2016
Previous Article Next Article

Two-step polarization switching mediated by a nonpolar intermediate phase in Hf0.4Zr0.6O2 thin films

Author affiliations

Abstract

The broken ferroelectric hysteresis loop achieved from a Hf0.4Zr0.6O2 film was interpreted based on the first order phase transition theory. The two-step polarization switching, which was expected from the theory, could be observed by dynamic pulse switching measurement. The variations in the interfacial capacitance values along with switching time and number of switching cycles could also be estimated from the pulse switching test. Being different from the one-step polarization switching in other ferroelectric films, two-step polarization switching produced two slanted plateau regions where the estimated interfacial capacitance values were different from each other. This could be understood based on the quantitative model of the two-step polarization switching with the involvement of an intermediate nonpolar phase. The Hf0.4Zr0.6O2 film was changed from antiferroelectric-like to ferroelectric-like with the increasing number of electric field cycles, which could be induced by the field driven phase change.

Graphical abstract: Two-step polarization switching mediated by a nonpolar intermediate phase in Hf0.4Zr0.6O2 thin films

Back to tab navigation

Article information


Submitted
25 Nov 2015
Accepted
14 Dec 2015
First published
15 Dec 2015

Nanoscale, 2016,8, 13898-13907
Article type
Paper

Two-step polarization switching mediated by a nonpolar intermediate phase in Hf0.4Zr0.6O2 thin films

M. H. Park, H. J. Kim, Y. H. Lee, Y. J. Kim, T. Moon, K. D. Kim, S. D. Hyun and C. S. Hwang, Nanoscale, 2016, 8, 13898
DOI: 10.1039/C5NR08346J

Social activity

Search articles by author

Spotlight

Advertisements