Issue 12, 2016

Energy band diagram of device-grade silicon nanocrystals


Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott–Schottky analysis, are employed to determine the energy band diagram of the Si NCs.

Graphical abstract: Energy band diagram of device-grade silicon nanocrystals

Supplementary files

Article information

Article type
03 Nov 2015
22 Feb 2016
First published
23 Feb 2016
This article is Open Access
Creative Commons BY license

Nanoscale, 2016,8, 6623-6628

Energy band diagram of device-grade silicon nanocrystals

M. Macias-Montero, S. Askari, S. Mitra, C. Rocks, C. Ni, V. Svrcek, P. A. Connor, P. Maguire, J. T. S. Irvine and D. Mariotti, Nanoscale, 2016, 8, 6623 DOI: 10.1039/C5NR07705B

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