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Issue 12, 2016
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Energy band diagram of device-grade silicon nanocrystals

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Abstract

Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott–Schottky analysis, are employed to determine the energy band diagram of the Si NCs.

Graphical abstract: Energy band diagram of device-grade silicon nanocrystals

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Publication details

The article was received on 03 Nov 2015, accepted on 22 Feb 2016 and first published on 23 Feb 2016


Article type: Paper
DOI: 10.1039/C5NR07705B
Nanoscale, 2016,8, 6623-6628
  • Open access: Creative Commons BY license
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    Energy band diagram of device-grade silicon nanocrystals

    M. Macias-Montero, S. Askari, S. Mitra, C. Rocks, C. Ni, V. Svrcek, P. A. Connor, P. Maguire, J. T. S. Irvine and D. Mariotti, Nanoscale, 2016, 8, 6623
    DOI: 10.1039/C5NR07705B

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