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Issue 20, 2016
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Nanoscale mapping of excitonic processes in single-layer MoS2 using tip-enhanced photoluminescence microscopy

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Abstract

In two-dimensional (2D) semiconductors, photoluminescence originating from recombination processes involving neutral electron–hole pairs (excitons) and charged complexes (trions) is strongly affected by the localized charge transfer due to inhomogeneous interactions with the local environment and surface defects. Herein, we demonstrate the first nanoscale mapping of excitons and trions in single-layer MoS2 using the full spectral information obtained via tip-enhanced photoluminescence (TEPL) microscopy along with tip-enhanced Raman spectroscopy (TERS) imaging of a 2D flake. Finally, we show the mapping of the PL quenching centre in single-layer MoS2 with an unprecedented spatial resolution of 20 nm. In addition, our research shows that unlike in aperture-scanning near field microscopy, preferential exciton emission mapping at the nanoscale using TEPL and Raman mapping using TERS can be obtained simultaneously using this method that can be used to correlate the structural and excitonic properties.

Graphical abstract: Nanoscale mapping of excitonic processes in single-layer MoS2 using tip-enhanced photoluminescence microscopy

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Supplementary files

Article information


Submitted
23 Oct 2015
Accepted
18 Apr 2016
First published
19 Apr 2016

Nanoscale, 2016,8, 10564-10569
Article type
Communication
Author version available

Nanoscale mapping of excitonic processes in single-layer MoS2 using tip-enhanced photoluminescence microscopy

W. Su, N. Kumar, S. Mignuzzi, J. Crain and D. Roy, Nanoscale, 2016, 8, 10564
DOI: 10.1039/C5NR07378B

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