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Issue 6, 2016
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Intense pulsed light induced crystallization of a liquid-crystalline polymer semiconductor for efficient production of flexible thin-film transistors

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Abstract

Here we demonstrated the split-second crystallization of a liquid-crystalline conjugated polymer semiconductor induced by irradiation with intense pulsed white light (IPWL) for the efficient improvement of electrical properties of flexible thin film transistors. A few seconds of IPWL irradiation of poly(didodecylquaterthiophene-alt-didodecylbithiazole) (PQTBTz-C12) thin films generated heat energy through the photo-thermal effect, leading to the crystallization of PQTBTz-C12 and formation of nodule-like nanostructures. The IPWL-induced crystallization of PQTBTz-C12 resulted in a threefold improvement in the field-effect mobility of thin film transistors compared to as-prepared devices. The conformational change of the PQTBTz-C12 chains was found to be strongly related to the irradiation fluence. As a proof-of-concept, the IPWL treatment was successfully applied to the PQTBTz-C12 layer in flexible transistors based on plastic substrates. The performance of these flexible devices was significantly improved after only 0.6 s of IPWL treatment, without deformation of the plastic substrate.

Graphical abstract: Intense pulsed light induced crystallization of a liquid-crystalline polymer semiconductor for efficient production of flexible thin-film transistors

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Publication details

The article was received on 14 Nov 2015, accepted on 06 Jan 2016 and first published on 22 Jan 2016


Article type: Paper
DOI: 10.1039/C5CP06989K
Phys. Chem. Chem. Phys., 2016,18, 4627-4634

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    Intense pulsed light induced crystallization of a liquid-crystalline polymer semiconductor for efficient production of flexible thin-film transistors

    H. Y. Yang, H. Park, S. J. Kim, J. Hong, T. W. Kim, D. H. Kim and J. A. Lim, Phys. Chem. Chem. Phys., 2016, 18, 4627
    DOI: 10.1039/C5CP06989K

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