Flux growth and 266 nm generation of a GdAl3(BO3)4 crystal

Abstract

The study focused on optimization of the growing conditions of GdAl₃(BO₃)₄ (GAB). Using Al₂O₃–B₂O₃–Li₂O–NaF as a flux, inclusion-free GAB crystals with sizes up to 18 × 18 × 35 mm³ were successfully grown using the top-seeded solution growth technique. The preparation of the starting materials, flux selection and optimization of the growing parameters are discussed in the study. Laser radiation at 266 nm was generated for the first time by a type I phase-matching GAB crystal.