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Issue 46, 2016
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Understanding the temperature-dependent evolution of solution processed metal oxide transistor characteristics based on molecular precursor derived amorphous indium zinc oxide

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Abstract

Amorphous indium zinc oxide (IZO) thin films are accessible by solution-deposition of mixtures of molecular single-source precursors with dimethyl 2-hydroxyimino- and 2-nitromalonato ligands (dmm-NOH and Hdmm-NO2, respectively). Thermal combustion of the precursor molecules In3O3(dmm-NO2)3·(toluene) and [Zn4O(dmm-NO)6] leads to a highly exothermic decomposition reaction yielding amorphous indium zinc oxide (IZO) even at a temperature of 150 °C. The main aim of the present investigation is to correlate the electronic performance in such solution processed field-effect transistors (FET) with the presence of surface groups and bulk defects depending on the processing temperatures of the resulting IZO films (250 to 400 °C). In depth electronic characterization using X-Ray- and Photoelectron Emission Spectroscopy (XPS and UPS) reveals major electronic changes during thin film formation in the temperature range between 275 and 300 °C. These findings are confirmed by Positron Annihilation Spectroscopy (PAS) which allows the monitoring of defects in a picometer range in the resulting functional IZO thin films. Resulting transistor mobilities (μ) of the semiconducting IZO films are in the range of those of amorphous silicon even at a processing temperature of 250 °C and increase up to 6 and 9.5 cm2 (V s)−1 at 350 and 400 °C with on/off ratios of 105 up to 107, respectively.

Graphical abstract: Understanding the temperature-dependent evolution of solution processed metal oxide transistor characteristics based on molecular precursor derived amorphous indium zinc oxide

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Publication details

The article was received on 08 Sep 2016, accepted on 26 Oct 2016 and first published on 10 Nov 2016


Article type: Paper
DOI: 10.1039/C6TC03915D
J. Mater. Chem. C, 2016,4, 10935-10944

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    Understanding the temperature-dependent evolution of solution processed metal oxide transistor characteristics based on molecular precursor derived amorphous indium zinc oxide

    S. Sanctis, R. C. Hoffmann, R. Precht, W. Anwand and J. J. Schneider, J. Mater. Chem. C, 2016, 4, 10935
    DOI: 10.1039/C6TC03915D

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