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Issue 41, 2016
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Azaisoindigo conjugated polymers for high performance n-type and ambipolar thin film transistor applications

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Abstract

Two new alternating copolymers, PAIIDBT and PAIIDSe have been prepared by incorporating a highly electron deficient azaisoindigo core. The molecular structure and packing of the monomer is determined from the single crystal X-ray diffraction. Both polymers exhibit high EAs and highly planar polymer backbones. When polymers are used as the semiconducting channel for solution-processed thin film transistor application, good properties are observed. A–A type PAIIDBT exhibits unipolar electron mobility as high as 1.0 cm2 V−1 s−1, D–A type PAIIDSe exhibits ambipolar charge transport behavior with predominately electron mobility up to 0.5 cm2 V−1 s−1 and hole mobility to 0.2 cm2 V−1 s−1. The robustness of the extracted mobility values are also commented on in detail. Molecular orientation, thin film morphology and energetic disorder of both polymers are systematically investigated.

Graphical abstract: Azaisoindigo conjugated polymers for high performance n-type and ambipolar thin film transistor applications

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Supplementary files

Article information


Submitted
15 Jul 2016
Accepted
26 Sep 2016
First published
28 Sep 2016

J. Mater. Chem. C, 2016,4, 9704-9710
Article type
Paper

Azaisoindigo conjugated polymers for high performance n-type and ambipolar thin film transistor applications

W. Yue, M. Nikolka, M. Xiao, A. Sadhanala, C. B. Nielsen, A. J. P. White, H. Chen, A. Onwubiko, H. Sirringhaus and I. McCulloch, J. Mater. Chem. C, 2016, 4, 9704
DOI: 10.1039/C6TC03000A

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