Non-volatile organic ferroelectric memory transistors fabricated using rigid polyimide islands on an elastomer substrate

Abstract

The authors fabricated stretchable organic ferroelectric memory transistors (OFMTs) on a polydimethylsiloxane substrate using rigid polyimide island structures. The OFMTs exhibited a field-effect mobility of 4 × 10⁻² cm² V⁻¹ s⁻¹ and a current on/off ratio of 10⁵ with a notably low threshold voltage. Furthermore, our memory TFTs exhibit excellent mechanical stability, showing no noticeable change in electrical performance up to a large strain of 50%. These results indicated the feasibility of a promising device for stretchable electronic systems.