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Issue 4, 2016
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A room-temperature CuAlO2 hole interfacial layer for efficient and stable planar perovskite solar cells

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Abstract

The fabrication and device parameters of inverted planar heterojunction (PHJ) organic–inorganic lead mixed-halide (CH3NH3PbI3−xClx) perovskite based solar cells (PSCs) using a:CuAlO2 as the hole selective buffer layer between the ITO electrode and PEDOT:PSS were demonstrated. Thin films of a:CuAlO2 were derived from a pre-fabricated polycrystalline CuAlO2 ceramic target by using the direct current (d.c.) magnetron sputtering technique. The one-step spin coating method was used to prepare the perovskite layer. A short circuit current density (Jsc) of 21.98 mA cm−2, an open circuit voltage (Voc) of 0.88 V, a fill factor (FF) of 0.75 and a power conversion efficiency (PCE) of 14.52% were achieved for the optimized device. These improved device parameters were also accompanied by improved stability as a result of sandwiching the ambient stable a:CuAlO2 layer with decent conductivity between the ITO and the PEDOT:PSS layers. The versatility of this material application was also demonstrated as a similar improvement in device performance and stability, which was observed by using the prepared a:CuAlO2 in another perovskite solar cell system based on CH3NH3PbI3 prepared by the two-step spin-coating method.

Graphical abstract: A room-temperature CuAlO2 hole interfacial layer for efficient and stable planar perovskite solar cells

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Publication details

The article was received on 04 Oct 2015, accepted on 15 Dec 2015 and first published on 17 Dec 2015


Article type: Paper
DOI: 10.1039/C5TA07957H
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J. Mater. Chem. A, 2016,4, 1326-1335

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    A room-temperature CuAlO2 hole interfacial layer for efficient and stable planar perovskite solar cells

    F. Igbari, M. Li, Y. Hu, Z. Wang and L. Liao, J. Mater. Chem. A, 2016, 4, 1326
    DOI: 10.1039/C5TA07957H

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