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Issue 20, 2016
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High-performance inverted planar heterojunction perovskite solar cells based on a solution-processed CuOx hole transport layer

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Abstract

During the past several years, methylammonium lead halide perovskites have been widely investigated as light absorbers for thin-film photovoltaic cells. Among the various device architectures, the inverted planar heterojunction perovskite solar cells have attracted special attention for their relatively simple fabrication and high efficiencies. Although promising efficiencies have been obtained in the inverted planar geometry based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) sulfonic acid (PEDOT:PSS) as the hole transport material (HTM), the hydrophilicity of the PEDOT:PSS is a critical factor for long-term stability. In this paper, a CuOx hole transport layer from a facile solution-processed method was introduced into the inverted planar heterojunction perovskite solar cells. After the optimization of the devices, a champion PCE of 17.1% was obtained with an open circuit voltage (Voc) of 0.99 V, a short-circuit current (Jsc) of 23.2 mA cm−2 and a fill factor (FF) of 74.4%. Furthermore, the unencapsulated device cooperating with the CuOx film exhibited superior performance in the stability test, compared to the device involving the PEDOT:PSS layer, indicating that CuOx could be a promising HTM for replacing PEDOT:PSS in inverted planar heterojunction perovskite solar cells.

Graphical abstract: High-performance inverted planar heterojunction perovskite solar cells based on a solution-processed CuOx hole transport layer

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Publication details

The article was received on 07 Mar 2016, accepted on 25 Apr 2016 and first published on 26 Apr 2016


Article type: Paper
DOI: 10.1039/C6NR01927G
Nanoscale, 2016,8, 10806-10813

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    High-performance inverted planar heterojunction perovskite solar cells based on a solution-processed CuOx hole transport layer

    W. Sun, Y. Li, S. Ye, H. Rao, W. Yan, H. Peng, Y. Li, Z. Liu, S. Wang, Z. Chen, L. Xiao, Z. Bian and C. Huang, Nanoscale, 2016, 8, 10806
    DOI: 10.1039/C6NR01927G

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