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Issue 39, 2016
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High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance

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Abstract

As demands for high pixel densities and wearable forms of displays increase, high-resolution printing technologies to achieve high performance transistors beyond current amorphous silicon levels and to allow low-temperature solution processability for plastic substrates have been explored as key processes in emerging flexible electronics. This study describes electrohydrodynamic inkjet (e-jet) technology for direct printing of oxide semiconductor thin film transistors (TFTs) with high resolution (minimum line width: 2 μm) and superb performance, including high mobility (∼230 cm2 V−1 s−1). Logic operations of the amplifier circuits composed of these e-jet-printed metal oxide semiconductor (MOS) TFTs demonstrate their high performance. Printed In2O TFTs with e-jet printing-assisted high-resolution S/D electrodes were prepared, and the direct printing of passivation layers on these channels enhanced their gate-bias stabilities significantly. Moreover, low process temperatures (<250 °C) enable the use of thin plastic substrates; highly flexible and stretchable TFT arrays have been demonstrated, suggesting promise for next-generation printed electronics.

Graphical abstract: High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance

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Supplementary files

Article information


Submitted
14 Jul 2016
Accepted
11 Sep 2016
First published
12 Sep 2016

Nanoscale, 2016,8, 17113-17121
Article type
Communication

High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance

S.-Y. Kim, K. Kim, Y. H. Hwang, J. Park, J. Jang, Y. Nam, Y. Kang, M. Kim, H. J. Park, Z. Lee, J. Choi, Y. Kim, S. Jeong, B.-S. Bae and J.-U. Park, Nanoscale, 2016, 8, 17113
DOI: 10.1039/C6NR05577J

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