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Issue 47, 2016

Gate-controlled conductance enhancement from quantum Hall channels along graphene p–n junctions

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Abstract

The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p–n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to the new conducting channels formed in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes are determined by the gate-controlled filling factor across the device. This effect could be exploited to probe the behavior and interaction of quantum Hall channels protected against uncontrolled scattering at the edges.

Graphical abstract: Gate-controlled conductance enhancement from quantum Hall channels along graphene p–n junctions

Article information


Submitted
26 Jun 2016
Accepted
29 Oct 2016
First published
31 Oct 2016

This article is Open Access

Nanoscale, 2016,8, 19910-19916
Article type
Paper
Author version available

Gate-controlled conductance enhancement from quantum Hall channels along graphene p–n junctions

E. Tóvári, P. Makk, M. Liu, P. Rickhaus, Z. Kovács-Krausz, K. Richter, C. Schönenberger and S. Csonka, Nanoscale, 2016, 8, 19910 DOI: 10.1039/C6NR05100F

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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