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Issue 33, 2016
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Lithography-free plasma-induced patterned growth of MoS2 and its heterojunction with graphene

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Abstract

Application-oriented patterned growth of transition metal dichalcogenides (TMDCs) and their heterojunctions is of critical importance for sophisticated, customized two-dimensional (2D) electronic and optoelectronic devices; however, it is still difficult to fabricate these patterns in a simple, clean, and high controllability manner without using optical lithography. Here, we report the direct synthesis of patterned MoS2 and graphene–MoS2 heterojunctions via selective plasma treatment of a SiO2/Si substrate and chemical vapor deposition of MoS2. This method has multiple merits, such as simple steps, a short operating time, easily isolated MoS2 layers with clean surfaces and controllable locations, shapes, sizes and thicknesses, which enable their integration into the device structure without using a photoresist. In addition, we demonstrate the direct growth of patterned graphene–MoS2 heterojunctions for the fabrication of transistor. This study reveals a novel method to fabricate and use patterned MoS2 and graphene–MoS2 heterojunctions, which could be generalized to the rational design of other 2D materials, heterojunctions and devices in the future.

Graphical abstract: Lithography-free plasma-induced patterned growth of MoS2 and its heterojunction with graphene

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Supplementary files

Article information


Submitted
23 Apr 2016
Accepted
04 Jul 2016
First published
05 Jul 2016

Nanoscale, 2016,8, 15181-15188
Article type
Paper

Lithography-free plasma-induced patterned growth of MoS2 and its heterojunction with graphene

X. Chen, Y. J. Park, T. Das, H. Jang, J. Lee and J. Ahn, Nanoscale, 2016, 8, 15181
DOI: 10.1039/C6NR03318K

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