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Issue 25, 2016
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Passivated ambipolar black phosphorus transistors

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Abstract

We report the first air-passivated ambipolar BP transistor formed by applying benzyl viologen, which serves as a surface charge transfer donor for BP flakes. The passivated BP devices exhibit excellent stability under both an ambient atmosphere and vacuum; their transistor performance is maintained semi-permanently. Unlike their intrinsic p-type properties, passivated BP devices present advantageous ambipolar properties with much higher electron mobility up to ∼83 cm2 V−1 s−1 from 2-terminal measurement at 300 K, compared to other reported studies on n-type BP transistors. On the basis of the n-type doping effect that originated from benzyl viologen, we also systematically investigated the BP thickness dependence of our devices on electrical properties, in which we found the best electron transport performance to be attained when an ∼10 nm thick BP flake was used.

Graphical abstract: Passivated ambipolar black phosphorus transistors

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Publication details

The article was received on 28 Mar 2016, accepted on 26 May 2016 and first published on 27 May 2016


Article type: Paper
DOI: 10.1039/C6NR02554D
Nanoscale, 2016,8, 12773-12779

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    Passivated ambipolar black phosphorus transistors

    D. Yue, D. Lee, Y. D. Jang, M. S. Choi, H. J. Nam, D. Jung and W. J. Yoo, Nanoscale, 2016, 8, 12773
    DOI: 10.1039/C6NR02554D

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