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Issue 27, 2016
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Quantum mechanical modeling the emission pattern and polarization of nanoscale light emitting diodes

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Abstract

Understanding of the electroluminescence (EL) mechanism in optoelectronic devices is imperative for further optimization of their efficiency and effectiveness. Here, a quantum mechanical approach is formulated for modeling the EL processes in nanoscale light emitting diodes (LED). Based on non-equilibrium Green's function quantum transport equations, interactions with the electromagnetic vacuum environment are included to describe electrically driven light emission in the devices. The presented framework is illustrated by numerical simulations of a silicon nanowire LED device. EL spectra of the nanowire device under different bias voltages are obtained and, more importantly, the radiation pattern and polarization of optical emission can be determined using the current approach. This work is an important step forward towards atomistic quantum mechanical modeling of the electrically induced optical response in nanoscale systems.

Graphical abstract: Quantum mechanical modeling the emission pattern and polarization of nanoscale light emitting diodes

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Article information


Submitted
21 Mar 2016
Accepted
20 May 2016
First published
23 May 2016

Nanoscale, 2016,8, 13168-13173
Article type
Communication

Quantum mechanical modeling the emission pattern and polarization of nanoscale light emitting diodes

R. Wang, Y. Zhang, F. Bi, T. Frauenheim, G. Chen and C. Yam, Nanoscale, 2016, 8, 13168
DOI: 10.1039/C6NR02356H

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