Jump to main content
Jump to site search

Issue 6, 2016
Previous Article Next Article

Giant tunnel magneto-resistance in graphene based molecular tunneling junction

Author affiliations

Abstract

We propose and theoretically investigate a class of stable zigzag graphene nanoribbon (ZGNR) based molecular magnetic tunneling junctions (MTJs). For those junctions having pentagon-connecting formations, huge tunnel magneto-resistance (TMR) is found. Different from most of the other proposed molecular junctions, the huge TMR in our structures is generic, and is not significantly affected by external parameters such as bias voltage, gate voltage, length of the molecule and width of the ZGNRs. The double pentagon-connecting formation between the molecule and ZGNRs is critical for the remarkable TMR ratio, which is as large as ∼2 × 105. These molecular MTJs behave as almost perfect spin filters and spin valve devices. Other connecting formations of the ZGNR based MTJs lead to much smaller TMR. By first principles analysis, we reveal the microscopic physics responsible for this phenomenon.

Graphical abstract: Giant tunnel magneto-resistance in graphene based molecular tunneling junction

Back to tab navigation

Publication details

The article was received on 28 Sep 2015, accepted on 06 Jan 2016 and first published on 07 Jan 2016


Article type: Paper
DOI: 10.1039/C5NR06585B
Author version
available:
Download author version (PDF)
Nanoscale, 2016,8, 3432-3438

  •   Request permissions

    Giant tunnel magneto-resistance in graphene based molecular tunneling junction

    B. Wang, J. Li, Y. Yu, Y. Wei, J. Wang and H. Guo, Nanoscale, 2016, 8, 3432
    DOI: 10.1039/C5NR06585B

Search articles by author

Spotlight

Advertisements