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Issue 48, 2016
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Bulk molybdenum field emitters by inductively coupled plasma etching

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Abstract

In this work we report on the fabrication of inductively coupled plasma (ICP) etched, diode-type, bulk molybdenum field emitter arrays. Emitter etching conditions as a function of etch mask geometry and process conditions were systematically investigated. For optimized uniformity, aspect ratios of >10 were achieved, with 25.5 nm-radius tips realised for masks consisting of aperture arrays some 4.45 μm in diameter and whose field electron emission performance has been herein assessed.

Graphical abstract: Bulk molybdenum field emitters by inductively coupled plasma etching

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Article information


Submitted
14 Sep 2016
Accepted
12 Nov 2016
First published
22 Nov 2016

Phys. Chem. Chem. Phys., 2016,18, 33152-33157
Article type
Paper

Bulk molybdenum field emitters by inductively coupled plasma etching

N. Zhu, M. T. Cole, W. I. Milne and J. Chen, Phys. Chem. Chem. Phys., 2016, 18, 33152
DOI: 10.1039/C6CP06340C

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