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Issue 20, 2016
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Defect passivation induced strong photoluminescence enhancement of rhombic monolayer MoS2

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Abstract

Growing high quality monolayer MoS2 with strong photoluminescence (PL) is essential to produce light-emitting devices on the atomic scale. In this study we show that rhombic monolayer MoS2 with PL intensity 8 times stronger than those of chemical vapour deposition (CVD)-grown triangular and mechanically exfoliated (ME) monolayer MoS2 can be prepared by using CVD. Both Raman and PL measurements indicate low density of defects in rhombic monolayer MoS2 with enhanced PL intensity. Density functional theory (DFT) calculations show that passivation of defects in MoS2 removes trapping gap states, which may finally result in PL enhancement.

Graphical abstract: Defect passivation induced strong photoluminescence enhancement of rhombic monolayer MoS2

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Publication details

The article was received on 13 Jan 2016, accepted on 25 Apr 2016 and first published on 25 Apr 2016


Article type: Paper
DOI: 10.1039/C6CP00241B
Phys. Chem. Chem. Phys., 2016,18, 14001-14006

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    Defect passivation induced strong photoluminescence enhancement of rhombic monolayer MoS2

    W. Su, L. Jin, X. Qu, D. Huo and L. Yang, Phys. Chem. Chem. Phys., 2016, 18, 14001
    DOI: 10.1039/C6CP00241B

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