Jump to main content
Jump to site search

Issue 6, 2016
Previous Article Next Article

ZnO nanorod/porous silicon nanowire hybrid structures as highly-sensitive NO2 gas sensors at room temperature

Author affiliations

Abstract

ZnO nanorod/porous silicon nanowire (ZnO/PSiNW) hybrids with three different structures as highly sensitive NO2 gas sensors were obtained. PSiNWs were first synthesized by metal-assisted chemical etching, and then seeded in three different ways. After that ZnO nanorods were grown on the seeded surface of PSiNWs using a hydrothermal procedure. ZnO/PSiNW hybrids showed excellent gas sensing performance for various NO2 concentrations (5–50 ppm) at room temperature, and the electrical resistance change rate reached as high as 35.1% when responding to 50 ppm NO2. The distinct enhancement was mainly attributed to the faster carrier transportation after combination, the increase in gas sensing areas and the oxygen vacancy (VO) concentration. Moreover, the p-type gas sensing behavior was explained by the gas sensing mechanism and the effect of VO concentration on gas sensing properties was also discussed concerning the photoluminescence (PL) spectra performance.

Graphical abstract: ZnO nanorod/porous silicon nanowire hybrid structures as highly-sensitive NO2 gas sensors at room temperature

Back to tab navigation

Supplementary files

Publication details

The article was received on 17 Nov 2015, accepted on 18 Jan 2016 and first published on 18 Jan 2016


Article type: Paper
DOI: 10.1039/C5CP07036H
Phys. Chem. Chem. Phys., 2016,18, 4835-4841

  •   Request permissions

    ZnO nanorod/porous silicon nanowire hybrid structures as highly-sensitive NO2 gas sensors at room temperature

    J. Liao, Z. Li, G. Wang, C. Chen, S. Lv and M. Li, Phys. Chem. Chem. Phys., 2016, 18, 4835
    DOI: 10.1039/C5CP07036H

Search articles by author

Spotlight

Advertisements