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Issue 37, 2015
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A chemical link between Ge–Sb–Te and In–Sb–Te phase-change materials

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Abstract

We identify a similar feature in the chemical-bonding nature of seemingly different phase-change materials (PCMs) for data storage. This affords new insight into the “next-generation” material In3SbTe2, establishes a hitherto missing link to the more ubiquitous Ge–Sb–Te alloys, and encourages the search for new PCMs beyond established electron-counting schemes.

Graphical abstract: A chemical link between Ge–Sb–Te and In–Sb–Te phase-change materials

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Publication details

The article was received on 28 Jul 2015, accepted on 24 Aug 2015 and first published on 26 Aug 2015


Article type: Communication
DOI: 10.1039/C5TC02314A
Citation: J. Mater. Chem. C, 2015,3, 9519-9523

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    A chemical link between Ge–Sb–Te and In–Sb–Te phase-change materials

    V. L. Deringer, W. Zhang, P. Rausch, R. Mazzarello, R. Dronskowski and M. Wuttig, J. Mater. Chem. C, 2015, 3, 9519
    DOI: 10.1039/C5TC02314A

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