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Issue 24, 2015
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Electron transfer properties of a monolayer of hybrid polyoxometalates on silicon

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Abstract

As electroactive molecules, polyoxometalates (POMs) have potential in charge trapping or resistive molecular memories, yet scarcely investigated until very recently. Since charge–discharge processes as well as transport properties are dependent upon the organization of the thin layers, we chose to explore a covalent approach and we prepared a diazonium post-functionalized Keggin-type polyoxometalate [PW11O39{Ge(p-C6H4–CC–C6H4–N2+)}]3− that was subsequently anchored on hydrogenated n-type Si(100) surfaces. A flat and homogeneous hybrid POM monolayer is obtained and characterized by AFM, ellipsometry and XPS techniques. Vertical and lateral electron transfers are studied by cyclic voltammetry and scanning electrochemical microscopy (SECM). If the electron transfer between the POM layer and the silicon surface is quite slow (kETvert = 5 s−1), SECM suggests that the monolayer displays a good lateral conductivity. Interestingly, SECM experiments evidence the influence of the organization of the layer on the lateral charge transfer and show the possibility to accumulate negative charges within the POM monolayer.

Graphical abstract: Electron transfer properties of a monolayer of hybrid polyoxometalates on silicon

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Publication details

The article was received on 09 Jan 2015, accepted on 18 May 2015 and first published on 20 May 2015


Article type: Paper
DOI: 10.1039/C5TC00074B
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J. Mater. Chem. C, 2015,3, 6266-6275

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    Electron transfer properties of a monolayer of hybrid polyoxometalates on silicon

    F. Volatron, J. Noël, C. Rinfray, P. Decorse, C. Combellas, F. Kanoufi and A. Proust, J. Mater. Chem. C, 2015, 3, 6266
    DOI: 10.1039/C5TC00074B

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